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1. product pro?le 1.1 general description PESD2CAN in a small sot23 surface-mounted device (smd) plastic package designed to protect two automotive controller area network (can) bus lines from the damage caused by electrostatic discharge (esd) and other transients. 1.2 features n due to the integrated diode structure only one small sot23 package is needed to protect two can bus lines n max. peak pulse power: p pp = 230 w at t p = 8/20 m s n low clamping voltage: v cl = 41 v at i pp =5a n ultra low leakage current: i rm <1na n esd protection up to 30 kv n iec 61000-4-2, level 4 (esd) n iec 61000-4-5 (surge); i pp = 5 a at t p = 8/20 m s n small smd plastic package 1.3 applications n can bus protection n automotive applications 1.4 quick reference data PESD2CAN can bus esd protection diode rev. 01 22 december 2006 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage - - 24 v c d diode capacitance f = 1 mhz; v r =0v- 2530pf
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 2 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [2] measured from pin 1 to 3 or 2 to 3. table 2. pinning pin description simpli?ed outline symbol 1 cathode 1 2 cathode 2 3 common cathode 12 3 2 1 006aaa155 3 table 3. ordering information type number package name description version PESD2CAN - plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PESD2CAN 6r* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p pp peak pulse power t p = 8/20 m s [1] [2] - 230 w i pp peak pulse current t p = 8/20 m s [1] [2] -5a per device t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 3 of 11 nxp semiconductors PESD2CAN can bus esd protection diode [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 1 to 3 or 2 to 3. table 6. esd maximum ratings symbol parameter conditions min max unit per diode v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] -30kv machine model [2] - 400 v mil-std-883 (human body model) [1] [2] -16kv table 7. esd standards compliance standard conditions per diode iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3 (human body model) > 4 kv fig 1. 8/20 m s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( m s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e - t 100 % i pp ; 8 m s 50 % i pp ; 20 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 4 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 6. characteristics [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [2] measured from pin 1 to 3 or 2 to 3. table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage - - 24 v i rm reverse leakage current v rwm =24v - <1 10 na v br breakdown voltage i r = 1 ma 26.2 28 30.3 v c d diode capacitance f = 1 mhz; v r =0v - 2530pf v cl clamping voltage i pp =1a [1] [2] --34v i pp =5a [1] [2] --41v r dif differential resistance i r = 1 ma - - 300 w t amb =25 c fig 3. peak pulse current as a function of clamping voltage; typical values fig 4. relative variation of peak pulse power as a function of junction temperature; typical values v cl (v) 25 45 40 30 35 006aaa937 4.0 2.0 6.0 8.0 i pp (a) 0 t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25 c)
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 5 of 11 nxp semiconductors PESD2CAN can bus esd protection diode f=1mhz (1) t amb = 150 c (2) t amb = 125 c (3) t amb =85 c (4) t amb =25 c (5) t amb = - 40 c (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 150 c fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. reverse current as a function of reverse voltage; typical values t amb = 150 c i r is less than 1 na at - 55 c and 25 c. fig 7. reverse voltage as a function of reverse leakage current; typical values fig 8. v-i characteristics for a bidirectional esd protection diode 006aaa938 v r (v) 024 16 8 18 22 14 26 30 c d (pf) 10 (1) (2) (3) (4) (5) v r (v) 24 34 32 28 30 26 006aaa939 20 30 10 40 50 i r (ma) 0 (1) (2) (3) 006aaa940 i rm (na) 030 20 10 10 15 5 20 25 v r (v) 0 006aaa676 - v cl - v br - v rwm v cl v br v rwm - i rm i rm - i r i r - i pp i pp - +
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 6 of 11 nxp semiconductors PESD2CAN can bus esd protection diode fig 9. esd clamping test setup and waveforms 006aaa941 50 w r z c z d.u.t. (device under test) unclamped + 8 kv esd pulse waveform (iec 61000-4-2 network) clamped + 8 kv esd pulse waveform (iec 61000-4-2 network), pin 1 to 3 unclamped - 8 kv esd pulse waveform (iec 61000-4-2 network) clamped - 8 kv esd voltage waveform (iec 61000-4-2 network), pin 1 to 3 450 w rg 223/u 50 w coax esd tester iec 61000-4-2 network c z = 150 pf; r z = 330 w 4 ghz digital oscilloscope 10 attenuator vertical scale = 10 a/div horizontal scale = 15 ns/div vertical scale = 25 v/div horizontal scale = 100 ns/div vertical scale = 10 a/div horizontal scale = 15 ns/div vertical scale = 25 v/div horizontal scale = 100 ns/div
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 7 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 7. application information the PESD2CAN is designed for the protection of two automotive can bus lines from the damage caused by esd and surge pulses. the PESD2CAN can be used for both, high-speed can bus and fault-tolerant can bus protection. the PESD2CAN provides a surge capability of up to 230 w per line for an 8/20 m s waveform. circuit board layout and protection device placement: circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the PESD2CAN as close to the input terminal or connector as possible. 2. the path length between the PESD2CAN and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protection conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. fig 10. typical application: esd protection of two automotive can bus lines 006aaa942 c g can bus transceiver can bus PESD2CAN split 2 3 1 r t/2 r t/2 canh canl common mode choke (optional)
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 8 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 12 . fig 11. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PESD2CAN sot23 4 mm pitch, 8 mm tape and reel -215 -235
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 9 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 10. revision history table 10. revision history document id release date data sheet status change notice supersedes PESD2CAN_1 20061222 product data sheet - -
PESD2CAN_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 22 december 2006 10 of 11 nxp semiconductors PESD2CAN can bus esd protection diode 11. legal information 11.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 11.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 11.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 12. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PESD2CAN can bus esd protection diode ? nxp b.v. 2006. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 22 december 2006 document identifier: PESD2CAN_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 13. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 7 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 packing information. . . . . . . . . . . . . . . . . . . . . . 8 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 contact information. . . . . . . . . . . . . . . . . . . . . 10 13 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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